Model Name：ASC5N1700MT3

Package：TO-247-3L

Voltage：1700V

Ron：1000mohm

Temperature Range：-40～150°C

Status：Product

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Features

? High Speed Switching with Low Capacitances
? High Blocking Voltage with Low RDS(on)
? Normally-off and simple to drive
? ROHS Compliant, Halogen free

Application

? High-frequency applications
? High Voltage DC/DC Converters
? Switch Mode Power Supplies
? Auxilialy power supplies