CMPA801B025??訂貨13632767652黃小姐微信同號(hào)

Cree’s?CMPA801B025?is?a?gallium?nitride?(GaN)?High?Electron?MobilityTransistor?(HEMT)?based?monolithic?microwave?integrated?circuit?(MMIC).GaN?has?superior?properties?compared?to?silicon?or?gallium?arsenide,?includinghigher?breakdown?voltage,?higher?saturated?electron?drift?velocity?and?higherthermal?conductivity.?GaN?HEMTs?also?offer?greater?power?density?and?widerbandwidths?compared?to?Si?and?GaAs?transistors.?This?MMIC?is?available?ina?10-lead?metal/ceramic?flanged?package?(CMPA801B025F)?or?small?formfactorpill?package?(CMPA801B025P)?for?optimal?electrical?and?thermal?performance.

CIEE的CMPA801B025是氮化鎵（GaN）高電子遷移率。

基于晶體管（HEMT）的單片微波集成電路（MMIC）。

與硅或砷化鎵相比，GaN具有優(yōu)異的性能，包括

擊穿電壓越高，飽和電子漂移速度越高

熱導(dǎo)率。GaN?HEMT還提供更大的功率密度和更寬的功率密度。

與Si和GaAs晶體管相比的帶寬。此MMIC可供使用。

10引線金屬/陶瓷法蘭封裝（CMPA801B025F）或小形狀因數(shù)

藥丸包裝（CMPA801B025P），以獲得最佳的電性能和熱性能。